A semi-deterministic channel model for VANETs simulations

International audienceIn this paper we propose a semi-deterministic channel propagation model for VANETs (Vehicular Ad-hoc NETworks) called UM-CRT. It is based on CRT (Communication Ray Tracer) and SCME-UM (Spatial Channel Model Extended - Urban Micro) which are respectively a deterministic channel simulator and a statistical channel model. It uses a process which adjusts the SCME-UM model using relevant parameters extracted from CRT. In order to evaluate this new model, we incorporate it into the NS-2 network simulator. Our results show that UM-CRT is adapted to VANETs simulations as it approximates in a realistic manner channel propagation mechanisms while improving simulation time

Light concentration solar cell: temperature proper and dynamic effects on electrical parameters determined by using J-V and P-V characteristics

The solar cell is assumed to be under light concentration (C=50 Suns) which leads us to take into consideration the electric field induced by electrons concentration gradient. We also take into consideration temperature influence on electron and hole diffusion parameters, on carrier generation rate, on carrier intrinsic concentration and on silicon energy gap. It emerges from results analysis that increase in temperature leads to decrease of open-circuit voltage and the photovoltaic parameters at the maximum power point (MPP) such as electric power, photo-voltage and photocurrent with however a slight increase of short-circuit photocurrent density. It also appears that temperature has a double effect on electrical parameters. The temperature dynamic effect which is characterized by parameters variations linked to operating point displacement caused by temperature variations. And the temperature proper effect which is characterized by parameters variation with temperature at a given operating point. Thus, the combination of these two effects represents temperature effective effect

Effect of light intensity on the performance of silicon solar cell

This work, presents the intense light effect on electrical parameters of silicon solar such as short circuit current, open circuit voltage, series and shunt resistances, maximum power, conversion efficiency, fill factor. After the resolution of the continuity equation which leads to the solar cell photocurrent and photovoltage expressions, we use the J/V characteristic to determine the solar cell series and shunt resistances. The maximum electric power of the solar cell is determined using the curves of electric power versus junction dynamic velocity, and then, the fill factor and conversion efficiency are calculated. Light concentration and junction dynamic velocity effects on solar cell short circuit current, open circuit voltage, series and shunt resistances, electric power, fill factor and conversion efficiency are also studied. The study proved that with increase of illumination light intensity, the solar cell shunt resistances decreases whereas series resistance, short circuit current, open circuit voltage, electric power, fill factor and conversion efficiency increases.Keywords: Light concentration, series resistance, shunt resistance, electric power, fill factor, Conversion efficienc